onsemi Isolated Type N-Channel SiC Power Module, 304 A, 1200 V, 36-Pin F2

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Bulk discount available

Subtotal (1 tube of 60 units)*

R 233 347,74

(exc. VAT)

R 268 349,88

(inc. VAT)

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  • Shipping from 18 June 2026
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Units
Per unit
Per Tube*
60 - 120R 3,889.129R 233,347.74
180 - 240R 3,791.901R 227,514.06
300 +R 3,678.144R 220,688.64

*price indicative

RS stock no.:
229-6509
Mfr. Part No.:
NXH006P120MNF2PTG
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

SiC Power Module

Maximum Continuous Drain Current Id

304A

Maximum Drain Source Voltage Vds

1200V

Package Type

F2

Mount Type

Chassis

Pin Count

36

Maximum Power Dissipation Pd

950W

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

847nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

6V

Transistor Configuration

Isolated

Maximum Operating Temperature

175°C

Height

17mm

Standards/Approvals

Halide Free, Pb-Free, RoHS

Length

63.3mm

Width

57 mm

Automotive Standard

No

The ON Semiconductor power module containing an 1200 V SiC MOSFET half−bridge and a thermistor in an F2 package. It is typically used in solar inverter, UPS, electrical vehicle charging stations and industrial power.

Options with pre−applied thermal interface material

Options with solderable pins and press−fit pins

Pb−free

RoHS compliant

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