STMicroelectronics 3 Phase A2U Type N-Channel SiC Power Module, 75 A, 1200 V Enhancement, 8-Pin ACEPACK 2
- RS stock no.:
- 249-6719
- Mfr. Part No.:
- A2U12M12W2-F2
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 tray of 18 units)*
R 78 674,616
(exc. VAT)
R 90 475,812
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 11 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 18 - 18 | R 4,370.812 | R 78,674.62 |
| 36 - 36 | R 4,261.542 | R 76,707.76 |
| 54 + | R 4,133.696 | R 74,406.53 |
*price indicative
- RS stock no.:
- 249-6719
- Mfr. Part No.:
- A2U12M12W2-F2
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | ACEPACK 2 | |
| Series | A2U | |
| Mount Type | Chassis | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 2.9V | |
| Typical Gate Charge Qg @ Vgs | 298nC | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | 3 Phase | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type ACEPACK 2 | ||
Series A2U | ||
Mount Type Chassis | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 2.9V | ||
Typical Gate Charge Qg @ Vgs 298nC | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration 3 Phase | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
3-level topology
ACEPACK 2 power module
13 mΩ of typical RDS(on) each switch
Insulation voltage UL certified of 2.5 kVrms
Integrated NTC temperature sensor
DBC Cu-Al2O3-Cu based
Press fit contact pins
An NTC sensor completes the design
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