STMicroelectronics SCT Type N-Channel SiC Power Module, 12 A, 1200 V Depletion, 3-Pin Hip-247
- RS stock no.:
- 202-4776
- Mfr. Part No.:
- SCT10N120AG
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 tube of 30 units)*
R 4 580,26
(exc. VAT)
R 5 267,30
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 19 unit(s), ready to ship from another location
Tube(s) | Per Tube | Per unit* |
|---|---|---|
| 1 - 3 | R 4,580.26 | R 152.675 |
| 4 - 8 | R 4,465.75 | R 148.858 |
| 9 - 16 | R 4,331.78 | R 144.393 |
| 17 - 33 | R 4,158.51 | R 138.617 |
| 34 + | R 3,992.17 | R 133.072 |
*price indicative
- RS stock no.:
- 202-4776
- Mfr. Part No.:
- SCT10N120AG
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | SiC Power Module | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.52Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.3V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Height | 34.95mm | |
| Width | 5.15 mm | |
| Length | 15.75mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type SiC Power Module | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.52Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.3V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Height 34.95mm | ||
Width 5.15 mm | ||
Length 15.75mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Very fast and robust intrinsic body diode
Low capacitance
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