onsemi Isolated Type N-Channel SiC Power Module, 304 A, 1200 V, 36-Pin F2 NXH006P120MNF2PTG
- RS stock no.:
- 229-6510
- Mfr. Part No.:
- NXH006P120MNF2PTG
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 5 006,31
(exc. VAT)
R 5 757,26
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 30 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | R 5,006.31 |
| 10 - 19 | R 4,881.15 |
| 20 - 29 | R 4,734.72 |
| 30 - 39 | R 4,545.33 |
| 40 + | R 4,363.52 |
*price indicative
- RS stock no.:
- 229-6510
- Mfr. Part No.:
- NXH006P120MNF2PTG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 304A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | F2 | |
| Mount Type | Chassis | |
| Pin Count | 36 | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 6V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 950W | |
| Typical Gate Charge Qg @ Vgs | 847nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 175°C | |
| Height | 17mm | |
| Standards/Approvals | Halide Free, Pb-Free, RoHS | |
| Length | 63.3mm | |
| Width | 57 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 304A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type F2 | ||
Mount Type Chassis | ||
Pin Count 36 | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 6V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 950W | ||
Typical Gate Charge Qg @ Vgs 847nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 175°C | ||
Height 17mm | ||
Standards/Approvals Halide Free, Pb-Free, RoHS | ||
Length 63.3mm | ||
Width 57 mm | ||
Automotive Standard No | ||
The ON Semiconductor power module containing an 1200 V SiC MOSFET half−bridge and a thermistor in an F2 package. It is typically used in solar inverter, UPS, electrical vehicle charging stations and industrial power.
Options with pre−applied thermal interface material
Options with solderable pins and press−fit pins
Pb−free
RoHS compliant
Related links
- onsemi SiC N-Channel SiC Power Module 1200 V, 36-Pin F2 NXH006P120MNF2PTG
- onsemi NXH Dual SiC N-Channel MOSFET 1200 V, 36-Pin PIM36 NXH006P120M3F2PTHG
- Infineon CoolSiC Dual SiC N-Channel SiC Power Module 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1
- ROHM BSM Dual SiC N-Channel SiC Power Module 1200 V, 4-Pin C BSM180D12P3C007
- STMicroelectronics SCT SiC N-Channel SiC Power Module 1200 V Depletion, 3-Pin HiP247 SCT10N120AG
- ROHM BSM Dual SiC N-Channel SiC Power Module 1200 V, 4-Pin C BSM120D12P2C005
- STMicroelectronics SCT SiC N-Channel SiC Power Module 1200 V Depletion, 3-Pin HiP247 SCT20N120AG
- ROHM BSM Dual SiC N-Channel SiC Power Module 1200 V, 4-Pin C BSM300D12P2E001