Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual
- RS stock no.:
- 228-2925
- Mfr. Part No.:
- SiS590DN-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 183,07
(exc. VAT)
R 210,53
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 5,920 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 18.307 | R 183.07 |
| 50 - 90 | R 17.849 | R 178.49 |
| 100 - 240 | R 17.314 | R 173.14 |
| 250 - 990 | R 16.621 | R 166.21 |
| 1000 + | R 15.956 | R 159.56 |
*price indicative
- RS stock no.:
- 228-2925
- Mfr. Part No.:
- SiS590DN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK 1212-8 Dual | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.251Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 23.1W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK 1212-8 Dual | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.251Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 23.1W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Combo N- & P-Channel -100 V MOSFET.
100 % Rg and UIS tested
Related links
- Vishay Dual TrenchFET 2 Type P 4 A 8-Pin PowerPAK 1212-8 Dual
- Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Dual TrenchFET 2 Type P 4 A 8-Pin TSOP
- Vishay Dual TrenchFET 2 Type P 4 A 8-Pin TSOP SI5515CDC-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SC-70
- Vishay Single TrenchFET Type P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8
- Vishay TrenchFET Type P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8
- Vishay TrenchFET Type P-Channel MOSFET 200 V, 8-Pin PowerPAK 1212-8