Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin TSOP SI5515CDC-T1-GE3
- RS stock no.:
- 180-7787
- Mfr. Part No.:
- SI5515CDC-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 20 units)*
R 226,16
(exc. VAT)
R 260,08
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,960 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 11.308 | R 226.16 |
| 40 - 80 | R 11.025 | R 220.50 |
| 100 - 480 | R 10.694 | R 213.88 |
| 500 - 980 | R 10.266 | R 205.32 |
| 1000 + | R 9.856 | R 197.12 |
*price indicative
- RS stock no.:
- 180-7787
- Mfr. Part No.:
- SI5515CDC-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Power Dissipation Pd | 3.1W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.65 mm | |
| Standards/Approvals | No | |
| Length | 3.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Power Dissipation Pd 3.1W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.65 mm | ||
Standards/Approvals No | ||
Length 3.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V and drain-source resistance of 36mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 3.1W. The MOSFET has a continuous drain current of 4A. It has application in load switches for portable devices. MOSFET has been optimized, for lower switching and conduction losses.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
Related links
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