Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8
- RS stock no.:
- 228-2909
- Mfr. Part No.:
- SiR681DP-T1-RE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 51 975,00
(exc. VAT)
R 59 772,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 3,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 17.325 | R 51,975.00 |
| 6000 + | R 16.891 | R 50,673.00 |
*price indicative
- RS stock no.:
- 228-2909
- Mfr. Part No.:
- SiR681DP-T1-RE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 71.9A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 69.4nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 71.9A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 69.4nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET P-channel is 80 V MOSFET.
100 % Rg and UIS tested
Related links
- Vishay TrenchFET Dual P-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR681DP-T1-RE3
- Vishay TrenchFET Dual P-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SI7469ADP-T1-RE3
- Vishay TrenchFET Dual P-Channel MOSFET 80 V, 6-Pin TSOP-6 Si3129DV-T1-GE3
- Vishay TrenchFET Dual P-Channel MOSFET 80 V, 3-Pin SOT-23 Si2387DS-T1-GE3
- Vishay TrenchFET Dual P-Channel MOSFET 20 V, 8-Pin TSSOP Si6423ADQ-T1-GE3
- Vishay TrenchFET Dual N/P-Channel MOSFET3.9 A 8-Pin SO-8 SI4559ADY-T1-E3
- Vishay TrenchFET Dual N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR580DP-T1-RE3
- Vishay TrenchFET Dual N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR880BDP-T1-RE3