Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8 SiR681DP-T1-RE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 289,49

(exc. VAT)

R 332,915

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 5,935 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45R 57.898R 289.49
50 - 95R 56.45R 282.25
100 - 245R 54.756R 273.78
250 - 995R 52.566R 262.83
1000 +R 50.464R 252.32

*price indicative

Packaging Options:
RS stock no.:
228-2910
Mfr. Part No.:
SiR681DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

71.9A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

69.4nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET P-channel is 80 V MOSFET.

100 % Rg and UIS tested

Related links