Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8 SiR681DP-T1-RE3

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Subtotal (1 pack of 5 units)*

R 302,21

(exc. VAT)

R 347,54

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 60.442R 302.21
50 - 95R 58.93R 294.65
100 - 245R 57.162R 285.81
250 - 995R 54.876R 274.38
1000 +R 52.68R 263.40

*price indicative

Packaging Options:
RS stock no.:
228-2910
Mfr. Part No.:
SiR681DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

71.9A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

69.4nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET P-channel is 80 V MOSFET.

100 % Rg and UIS tested

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