Vishay TrenchFET Type P-Channel MOSFET, 50 A, 20 V Enhancement, 8-Pin SO-8 SIR401DP-T1-GE3

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Subtotal (1 pack of 5 units)*

R 85,80

(exc. VAT)

R 98,65

(inc. VAT)

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  • 2,635 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45R 17.16R 85.80
50 - 245R 16.732R 83.66
250 - 995R 16.23R 81.15
1000 - 2995R 15.58R 77.90
3000 +R 14.956R 74.78

*price indicative

Packaging Options:
RS stock no.:
787-9342
Mfr. Part No.:
SIR401DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

205nC

Maximum Power Dissipation Pd

39W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.1V

Maximum Gate Source Voltage Vgs

12 V

Maximum Operating Temperature

150°C

Width

5.26 mm

Length

6.25mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


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