Vishay TrenchFET Type P-Channel MOSFET, 50 A, 20 V Enhancement, 8-Pin SO-8 SIR401DP-T1-GE3

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Subtotal (1 pack of 5 units)*

R 88,22

(exc. VAT)

R 101,455

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 17.644R 88.22
50 - 245R 17.202R 86.01
250 - 995R 16.686R 83.43
1000 - 2995R 16.018R 80.09
3000 +R 15.378R 76.89

*price indicative

Packaging Options:
RS stock no.:
787-9342
Mfr. Part No.:
SIR401DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

205nC

Maximum Power Dissipation Pd

39W

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.1V

Maximum Operating Temperature

150°C

Length

6.25mm

Standards/Approvals

No

Width

5.26 mm

Height

1.12mm

Automotive Standard

No

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