Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-247

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Bulk discount available

Subtotal (1 tube of 25 units)*

R 1 518,00

(exc. VAT)

R 1 745,75

(inc. VAT)

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Last RS stock
  • Final 425 unit(s), ready to ship from another location
Units
Per unit
Per Tube*
25 - 75R 60.72R 1,518.00
100 - 475R 59.202R 1,480.05
500 - 975R 57.426R 1,435.65
1000 - 2475R 55.129R 1,378.23
2500 +R 52.924R 1,323.10

*price indicative

RS stock no.:
228-2863
Mfr. Part No.:
SiHG080N60E-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

227W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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