Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247

RS stock no.:: 145-2157
Mfr. Part No.:: SIHG30N60E-GE3
Manufacturer:: Vishay

Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247

Image representative of range

Subtotal (1 tube of 25 units)*

R 2 321,675

(exc. VAT)

R 2 669,925

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 475 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
25 +	R 92.867	R 2,321.68

*price indicative

RS stock no.:: 145-2157
Mfr. Part No.:: SIHG30N60E-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	600V
	Series	E
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	85nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Height	20.82mm
	Width	5.31 mm
	Standards/Approvals	No
	Length	15.87mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 600V
	Series E
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 85nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Height 20.82mm
	Width 5.31 mm
	Standards/Approvals No
	Length 15.87mm
	Automotive Standard No

COO (Country of Origin):: CN

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features

Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247

FREE delivery for orders over R 1,500.00

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

Features

MOSFET Transistors, Vishay Semiconductor

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