Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-247 SIHG11N80AE-GE3

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Subtotal (1 tube of 25 units)*

R 972,825

(exc. VAT)

R 1 118,75

(inc. VAT)

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  • Plus 1,475 unit(s) shipping from 24 August 2026
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Units
Per unit
Per Tube*
25 - 25R 38.913R 972.83
50 +R 37.94R 948.50

*price indicative

RS stock no.:
210-4981
Mfr. Part No.:
SIHG11N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

391mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

78W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

28nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

45.3mm

Height

4.83mm

Automotive Standard

No

The Vishay E Series Power MOSFET has TO-247AC package type with single configuration.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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