Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220

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Bulk discount available

Subtotal (1 tube of 50 units)*

R 2 662,65

(exc. VAT)

R 3 062,05

(inc. VAT)

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In Stock
  • Plus 700 unit(s) shipping from 29 December 2025
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Units
Per unit
Per Tube*
50 - 50R 53.253R 2,662.65
100 - 450R 51.921R 2,596.05
500 - 950R 50.364R 2,518.20
1000 - 1950R 48.349R 2,417.45
2000 +R 46.415R 2,320.75

*price indicative

RS stock no.:
228-2874
Mfr. Part No.:
SiHP080N60E-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

42nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

227W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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