Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

R 2 080,55

(exc. VAT)

R 2 392,65

(inc. VAT)

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In Stock
  • 650 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
50 - 50R 41.611R 2,080.55
100 - 450R 40.571R 2,028.55
500 - 950R 39.354R 1,967.70
1000 - 1950R 37.779R 1,888.95
2000 +R 36.268R 1,813.40

*price indicative

RS stock no.:
228-2874
Mfr. Part No.:
SiHP080N60E-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

42nC

Maximum Power Dissipation Pd

227W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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