Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-247 SiHG080N60E-GE3

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Subtotal (1 pack of 2 units)*

R 202,48

(exc. VAT)

R 232,86

(inc. VAT)

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Last RS stock
  • Final 438 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
2 - 8R 101.24R 202.48
10 - 24R 98.71R 197.42
26 - 98R 95.75R 191.50
100 - 498R 91.92R 183.84
500 +R 88.245R 176.49

*price indicative

Packaging Options:
RS stock no.:
228-2864
Mfr. Part No.:
SiHG080N60E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

227W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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