Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-247 SiHG080N60E-GE3

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Subtotal (1 pack of 2 units)*

R 205,91

(exc. VAT)

R 236,796

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 102.955R 205.91
10 - 24R 100.38R 200.76
26 - 98R 97.37R 194.74
100 - 498R 93.475R 186.95
500 +R 89.735R 179.47

*price indicative

Packaging Options:
RS stock no.:
228-2864
Mfr. Part No.:
SiHG080N60E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

227W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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