Infineon CoolMOS Type N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-263 IPB65R110CFDAATMA1

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

R 228,02

(exc. VAT)

R 262,22

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 1,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8R 114.01R 228.02
10 - 98R 111.16R 222.32
100 - 248R 107.825R 215.65
250 - 498R 103.51R 207.02
500 +R 99.37R 198.74

*price indicative

Packaging Options:
RS stock no.:
222-4656
Mfr. Part No.:
IPB65R110CFDAATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31.2A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Ultra fast body diode

Related links