Infineon CoolMOS Type N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-263 IPB65R190C7ATMA2

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Subtotal (1 pack of 5 units)*

R 194,74

(exc. VAT)

R 223,95

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 38.948R 194.74
10 - 95R 37.974R 189.87
100 - 245R 36.834R 184.17
250 - 495R 35.36R 176.80
500 +R 33.946R 169.73

*price indicative

Packaging Options:
RS stock no.:
222-4658
Mfr. Part No.:
IPB65R190C7ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31.2A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

AEC Q101 qualified

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