Infineon OptiMOS Type N-Channel MOSFET, 70 A, 40 V Enhancement, 8-Pin TDSON IPC70N04S5L4R2ATMA1
- RS stock no.:
- 222-4662
- Mfr. Part No.:
- IPC70N04S5L4R2ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 15 units)*
R 194,085
(exc. VAT)
R 223,20
(inc. VAT)
Add 135 units to get free delivery
Last RS stock
- Final 4,890 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 12.939 | R 194.09 |
| 30 - 75 | R 12.615 | R 189.23 |
| 90 - 225 | R 12.237 | R 183.56 |
| 240 - 465 | R 11.747 | R 176.21 |
| 480 + | R 11.277 | R 169.16 |
*price indicative
- RS stock no.:
- 222-4662
- Mfr. Part No.:
- IPC70N04S5L4R2ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Length | 5.25mm | |
| Standards/Approvals | No | |
| Width | 5.58 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Length 5.25mm | ||
Standards/Approvals No | ||
Width 5.58 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
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