Infineon OptiMOS Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON BSC014N04LSATMA1
- RS stock no.:
- 171-1961
- Mfr. Part No.:
- BSC014N04LSATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 221,32
(exc. VAT)
R 254,52
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 5,000 unit(s) shipping from 20 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 22.132 | R 221.32 |
| 50 - 90 | R 21.579 | R 215.79 |
| 100 - 240 | R 20.932 | R 209.32 |
| 250 - 490 | R 20.095 | R 200.95 |
| 500 + | R 19.291 | R 192.91 |
*price indicative
- RS stock no.:
- 171-1961
- Mfr. Part No.:
- BSC014N04LSATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Power Dissipation Pd | 96W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.15 mm | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Height | 1.1mm | |
| Length | 5.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Power Dissipation Pd 96W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 6.15 mm | ||
Standards/Approvals J-STD20 and JESD22 | ||
Height 1.1mm | ||
Length 5.15mm | ||
Automotive Standard No | ||
The Infineon BSC014N04LS is the optiMOS power-MOSFET having PG-TDSON-8 type package. It has perfect switching behaviour for fast switching applications.
Very low on-state resistance RDS(on)
100% avalanche tested
Superior thermal resistance
Related links
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