Infineon OptiMOS N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON BSC014N04LSATMA1

RS stock no.:: 170-2297
Mfr. Part No.:: BSC014N04LSATMA1
Manufacturer:: Infineon

Infineon OptiMOS N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON BSC014N04LSATMA1

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Subtotal (1 reel of 5000 units)*

R 49 440,00

(exc. VAT)

R 56 855,00

(inc. VAT)

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Units	Per unit	Per Reel*
5000 - 5000	R 9.888	R 49,440.00
10000 - 10000	R 9.64	R 48,200.00
15000 +	R 9.351	R 46,755.00

*price indicative

RS stock no.:: 170-2297
Mfr. Part No.:: BSC014N04LSATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	61nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	96W
	Maximum Operating Temperature	150°C
	Length	5.15mm
	Height	1.1mm
	Standards/Approvals	J-STD20 and JESD22
	Width	6.15mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 61nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 96W
	Maximum Operating Temperature 150°C
	Length 5.15mm
	Height 1.1mm
	Standards/Approvals J-STD20 and JESD22
	Width 6.15mm
	Automotive Standard No

Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC014N04LSATMA1

This MOSFET is a high-current N-channel switching transistor designed for surface-mount power applications. It operates across a wide temperature span, supports substantial continuous drain currents and is intended for compact power conversion and high-efficiency switching tasks in industrial electronic systems.

Features and Benefits:

• 1.4mΩ low Rds(on) reduces conduction losses
• 100A continuous drain current enables high-current handling
• 40V drain-source rating permits mid-voltage power stages
• 61nC typical gate charge supports fast switching performance
• 96W maximum power dissipation allows significant thermal loading
• 20V maximum gate-source voltage accommodates robust gate drive

Applications

• Suitable for DC-DC converter primary and secondary stages
• Ideal for high-current power rails in industrial equipment
• Used with synchronous buck converters for efficient switching
• Can be used for motor driver half-bridge modules
• Suitable for compact surface-mount power assemblies

What package and mounting method does it use?

It is supplied in an 8-pin TDSON package and intended for surface mounting to a board.

How does it cope with extended temperature ranges?

It is rated to operate from -55°C up to 150°C, enabling use in demanding thermal environments.

What gate-drive limitations should designers observe?

The device permits a maximum gate-source voltage of 20V, so gate drivers must remain within this limit.

What electrical polarity and channel behaviour does it follow?

It is an enhancement-mode N-channel device and requires positive gate drive to conduct.