Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON

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Subtotal (1 reel of 5000 units)*

R 90 040,00

(exc. VAT)

R 103 545,00

(inc. VAT)

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  • Shipping from 25 May 2026
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Units
Per unit
Per Reel*
5000 - 5000R 18.008R 90,040.00
10000 - 10000R 17.558R 87,790.00
15000 +R 17.031R 85,155.00

*price indicative

RS stock no.:
214-8969
Mfr. Part No.:
BSC010N04LSIATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

275A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.05mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

87nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

139W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.7V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.2mm

Length

5.35mm

Width

6.1 mm

Automotive Standard

No

The Infineon New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.

Monolithic integrated Schottky-like diode

Optimized for synchronous rectification

100% avalanche tested

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