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Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1

RS stock no.:: 214-8970
Mfr. Part No.:: BSC010N04LSIATMA1
Manufacturer:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1

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Bulk discount available

Subtotal (1 pack of 5 units)*

R 312,91

(exc. VAT)

R 359,845

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 4,050 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 5	R 62.582	R 312.91
10 - 95	R 61.018	R 305.09
100 - 245	R 59.188	R 295.94
250 - 495	R 56.82	R 284.10
500 +	R 54.548	R 272.74

*price indicative

RS stock no.:: 214-8970
Mfr. Part No.:: BSC010N04LSIATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	275A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.05mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.7V
	Maximum Power Dissipation Pd	139W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	87nC
	Maximum Operating Temperature	150°C
	Height	1.2mm
	Length	5.35mm
	Width	6.1 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 275A
	Maximum Drain Source Voltage Vds 40V
	Package Type TDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.05mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.7V
	Maximum Power Dissipation Pd 139W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 87nC
	Maximum Operating Temperature 150°C
	Height 1.2mm
	Length 5.35mm
	Width 6.1 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSC010N04LSIATMA1

The Infineon New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.

Monolithic integrated Schottky-like diode

Optimized for synchronous rectification

100% avalanche tested

Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1

FREE delivery for orders over R 1,500.00

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