Infineon OptiMOS Type N-Channel MOSFET & Diode, 90 A, 60 V Enhancement, 3-Pin TO-252

RS stock no.:: 220-7413
Mfr. Part No.:: IPD90N06S407ATMA2
Manufacturer:: Infineon

Infineon OptiMOS Type N-Channel MOSFET & Diode, 90 A, 60 V Enhancement, 3-Pin TO-252

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Bulk discount available

Subtotal (1 reel of 2500 units)*

R 23 732,50

(exc. VAT)

R 27 292,50

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 30 March 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2500 - 2500	R 9.493	R 23,732.50
5000 - 5000	R 9.256	R 23,140.00
7500 +	R 8.978	R 22,445.00

*price indicative

RS stock no.:: 220-7413
Mfr. Part No.:: IPD90N06S407ATMA2
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.9mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	79W
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	43nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	2.41mm
	Standards/Approvals	No
	Width	6.22 mm
	Length	6.73mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.9mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 79W
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 43nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 2.41mm
	Standards/Approvals No
	Width 6.22 mm
	Length 6.73mm
	Automotive Standard AEC-Q101

Datasheet - IPD90N06S407ATMA2

The Infineon offers a wide range of 55V-60V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages and ranging RDS(on) from 1.5mΩ up to 160mΩ.The new 60V automotive MOSFET family with OptiMOS5 technology delivers more power and leading performance. OptiMOS 5 provides reduced conduction losses optimized for drives and power conversion applications. The smaller leadless packages SSO8 (5x6mm2) and S3O8(3x3mm2) enable space savings by more than 50% compared to the area of a DPAK.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

100% Avalanche tested

Ultra low RDSon

world's lowest RDS at 60V (on)

highest current capability

lowest switching and conduction power losses for highest thermal efficiency

robust packages with superior quality and reliability

Optimized total gate charge enables smaller driver output stages

Infineon OptiMOS Type N-Channel MOSFET & Diode, 90 A, 60 V Enhancement, 3-Pin TO-252

FREE delivery for orders over R 1,500.00

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