Infineon OptiMOS Type P-Channel MOSFET & Diode, 70 A, 40 V Enhancement, 3-Pin TO-252

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Subtotal 20 units (supplied on a continuous strip)*

R 335,36

(exc. VAT)

R 385,66

(inc. VAT)

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Units
Per unit
20 - 90R 16.768
100 - 240R 16.265
250 - 490R 15.614
500 +R 14.989

*price indicative

Packaging Options:
RS stock no.:
220-7412P
Mfr. Part No.:
IPD70P04P4L08ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.3V

Maximum Power Dissipation Pd

75W

Typical Gate Charge Qg @ Vgs

71nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.41mm

Length

6.73mm

Automotive Standard

AEC-Q101

The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5.

P-channel - Logic Level - Enhancement mode

No charge pump required for high side drive.

Simple interface drive circuit

World's lowest RDSon at 40V

Highest current capability

Lowest switching and conduction power losses for highest thermal efficiency

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