Infineon HEXFET Type N-Channel MOSFET, 324 A, 25 V SuperSO IRFH8201TRPBF

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Subtotal (1 pack of 10 units)*

R 295,28

(exc. VAT)

R 339,57

(inc. VAT)

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  • Shipping from 31 March 2026
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Units
Per unit
Per Pack*
10 - 10R 29.528R 295.28
20 - 90R 28.79R 287.90
100 - 240R 27.926R 279.26
250 - 490R 26.809R 268.09
500 +R 25.737R 257.37

*price indicative

Packaging Options:
RS stock no.:
218-3104
Mfr. Part No.:
IRFH8201TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

324A

Maximum Drain Source Voltage Vds

25V

Series

HEXFET

Package Type

SuperSO

Mount Type

Surface

Maximum Drain Source Resistance Rds

950mΩ

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

156W

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.9mm

Length

6mm

Width

5 mm

Automotive Standard

No

The Infineon HEXFET series single N-Channel Power MOSFET. It is mainly used in battery operated DC motor inverters.

Compatible with Existing Surface Mount Techniques

Low Thermal Resistance to PCB (<0.8°C/W)

RoHS Compliant, Halogen-Free

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