Infineon HEXFET Type N-Channel MOSFET, 34 A, 200 V Enhancement, 8-Pin SuperSO IRFH5020TRPBF

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Subtotal (1 pack of 10 units)*

R 166,57

(exc. VAT)

R 191,56

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 16.657R 166.57
20 - 90R 16.241R 162.41
100 - 240R 15.754R 157.54
250 - 490R 15.124R 151.24
500 +R 14.519R 145.19

*price indicative

Packaging Options:
RS stock no.:
217-2609
Mfr. Part No.:
IRFH5020TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

200V

Package Type

SuperSO

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

55mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.6W

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

0.9mm

Length

5mm

Automotive Standard

No

The Infineon 200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Normal level : Optimized for 10 V gate drive voltage

Industry standard surface-mount power package

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