Infineon HEXFET Type N-Channel MOSFET, 34 A, 200 V Enhancement, 8-Pin SuperSO

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Subtotal (1 reel of 4000 units)*

R 47 316,00

(exc. VAT)

R 54 412,00

(inc. VAT)

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  • 4,000 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
4000 - 4000R 11.829R 47,316.00
8000 - 8000R 11.533R 46,132.00
12000 +R 11.187R 44,748.00

*price indicative

RS stock no.:
217-2608
Mfr. Part No.:
IRFH5020TRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

200V

Package Type

SuperSO

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

55mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.6W

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Height

0.9mm

Standards/Approvals

RoHS

Length

5mm

Automotive Standard

No

The Infineon 200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Normal level : Optimized for 10 V gate drive voltage

Industry standard surface-mount power package

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