Infineon OptiMOS Type N-Channel MOSFET, 195 A, 40 V, 8-Pin SuperSO BSC014N04LSIATMA1
- RS stock no.:
- 214-4319
- Distrelec Article No.:
- 304-39-396
- Mfr. Part No.:
- BSC014N04LSIATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 5 units)*
R 199,35
(exc. VAT)
R 229,25
(inc. VAT)
Add 40 units to get free delivery
In Stock
- Plus 3,910 unit(s) shipping from 16 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 39.87 | R 199.35 |
| 10 - 95 | R 38.874 | R 194.37 |
| 100 - 245 | R 37.708 | R 188.54 |
| 250 - 495 | R 36.20 | R 181.00 |
| 500 + | R 34.752 | R 173.76 |
*price indicative
- RS stock no.:
- 214-4319
- Distrelec Article No.:
- 304-39-396
- Mfr. Part No.:
- BSC014N04LSIATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Forward Voltage Vf | 0.7V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Forward Voltage Vf 0.7V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Automotive Standard No | ||
This Infineon OptiMOS Power MOSFET is optimized for synchronous rectification and has higher solder joint reliability due to enlarged source interconnection.
It is Halogen-free according to IEC61249-2-21
Related links
- Infineon OptiMOS Type N-Channel MOSFET 40 V, 8-Pin SuperSO
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- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin SuperSO
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