Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-252
- RS stock no.:
- 218-3050
- Mfr. Part No.:
- IPD60R280P7SAUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 19 317,50
(exc. VAT)
R 22 215,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 05 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 7.727 | R 19,317.50 |
| 5000 - 5000 | R 7.534 | R 18,835.00 |
| 7500 + | R 7.308 | R 18,270.00 |
*price indicative
- RS stock no.:
- 218-3050
- Mfr. Part No.:
- IPD60R280P7SAUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 53W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series 600V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 53W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 series N-channel power MOSFET. It has extremely low switching and conduction losses which makes switching applications even more efficient, more compact and much cooler.
Significant reduction of switching and conduction losses
Suitable for hard and soft switching
Related links
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin DPAK IPD60R280P7SAUMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R280P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPA60R280P7SXKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPAW60R280P7SXKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPA60R280P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin D2PAK IPB60R280P7ATMA1
- STMicroelectronics N-Channel MOSFET 600 V, 3-Pin DPAK STD15N60DM6
- STMicroelectronics MDmesh M2 N-Channel MOSFET 600 V, 3-Pin DPAK STD16N60M2