Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263
- RS stock no.:
- 214-4369
- Mfr. Part No.:
- IPB60R280P7ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 1000 units)*
R 19 461,00
(exc. VAT)
R 22 380,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 04 May 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | R 19.461 | R 19,461.00 |
| 2000 - 2000 | R 18.974 | R 18,974.00 |
| 3000 + | R 18.405 | R 18,405.00 |
*price indicative
- RS stock no.:
- 214-4369
- Mfr. Part No.:
- IPB60R280P7ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 53W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.27 mm | |
| Height | 4.5mm | |
| Length | 10.02mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series 600V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 53W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 9.27 mm | ||
Height 4.5mm | ||
Length 10.02mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
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