Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-252 IPD60R280P7SAUMA1
- RS stock no.:
- 218-3051
- Mfr. Part No.:
- IPD60R280P7SAUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 15 units)*
R 219,135
(exc. VAT)
R 252,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 60 unit(s) shipping from 12 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 14.609 | R 219.14 |
| 30 - 75 | R 14.243 | R 213.65 |
| 90 - 225 | R 13.816 | R 207.24 |
| 240 - 465 | R 13.263 | R 198.95 |
| 480 + | R 12.733 | R 191.00 |
*price indicative
- RS stock no.:
- 218-3051
- Mfr. Part No.:
- IPD60R280P7SAUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 53W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series 600V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 53W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 series N-channel power MOSFET. It has extremely low switching and conduction losses which makes switching applications even more efficient, more compact and much cooler.
Significant reduction of switching and conduction losses
Suitable for hard and soft switching
Related links
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
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- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V N, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V N, 3-Pin TO-220 IPAW60R280P7SXKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V N, 3-Pin TO-220 IPA60R280P7SXKSA1