Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263 IPB60R280P7ATMA1
- RS stock no.:
- 214-4370
- Mfr. Part No.:
- IPB60R280P7ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 332,43
(exc. VAT)
R 382,29
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 290 unit(s) shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 33.243 | R 332.43 |
| 20 - 90 | R 32.412 | R 324.12 |
| 100 - 240 | R 31.44 | R 314.40 |
| 250 - 490 | R 30.182 | R 301.82 |
| 500 + | R 28.975 | R 289.75 |
*price indicative
- RS stock no.:
- 214-4370
- Mfr. Part No.:
- IPB60R280P7ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P7 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.02mm | |
| Standards/Approvals | No | |
| Width | 9.27 mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P7 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Operating Temperature 150°C | ||
Length 10.02mm | ||
Standards/Approvals No | ||
Width 9.27 mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
Related links
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R280P7XKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R280P7SAUMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V N, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V N, 3-Pin TO-220 IPAW60R280P7SXKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V N, 3-Pin TO-220 IPA60R280P7SXKSA1