Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263 IPB60R280P7ATMA1

Image representative of range

Bulk discount available
View bulk pricing option

Subtotal (1 pack of 10 units)*

R 206,82

(exc. VAT)

R 237,84

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 280 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
10 - 10R 20.682R 206.82
20 - 90R 20.165R 201.65
100 - 240R 19.56R 195.60
250 - 490R 18.778R 187.78
500 +R 18.027R 180.27

*price indicative

Packaging Options:
RS stock no.:
214-4370
Mfr. Part No.:
IPB60R280P7ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

53W

Maximum Operating Temperature

150°C

Height

4.5mm

Length

10.02mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy