Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 22 275,00

(exc. VAT)

R 25 625,00

(inc. VAT)

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  • Shipping from 08 December 2026
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Units
Per unit
Per Reel*
2500 - 2500R 8.91R 22,275.00
5000 - 5000R 8.688R 21,720.00
7500 +R 8.427R 21,067.50

*price indicative

RS stock no.:
214-4385
Mfr. Part No.:
IPD60R180P7SAUMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

25nC

Maximum Power Dissipation Pd

72W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.65mm

Height

2.35mm

Automotive Standard

No

The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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