Infineon OptiMOS-T2 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L12ATMA2

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Subtotal (1 pack of 20 units)*

R 257,08

(exc. VAT)

R 295,64

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 20R 12.854R 257.08
40 - 80R 12.533R 250.66
100 - 220R 12.157R 243.14
240 - 480R 11.67R 233.40
500 +R 11.203R 224.06

*price indicative

Packaging Options:
RS stock no.:
218-3045
Mfr. Part No.:
IPD50N06S4L12ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

30nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

50W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

175°C

Height

2.41mm

Length

6.73mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel automotive MOSFET. It has DPAK (TO-252) package type.

N-channel - Enhancement mode

100% Avalanche tested

175°C operating temperature

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