Infineon OptiMOS Type N-Channel MOSFET, 46 A, 60 V N, 8-Pin TSDSON BSZ099N06LS5ATMA1

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Subtotal (1 pack of 20 units)*

R 224,06

(exc. VAT)

R 257,66

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 20R 11.203R 224.06
40 - 80R 10.923R 218.46
100 - 220R 10.595R 211.90
240 - 480R 10.171R 203.42
500 +R 9.764R 195.28

*price indicative

Packaging Options:
RS stock no.:
218-2986
Mfr. Part No.:
BSZ099N06LS5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

46A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.9mΩ

Channel Mode

N

Maximum Power Dissipation Pd

36W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

6.9nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.1mm

Standards/Approvals

No

Length

3.4mm

Width

3.4 mm

Automotive Standard

No

The Infineon OptiMOS™ series N-channel power MOSFET. It is highly suitable for wireless charging, adapter and telecom applications. The devices low gate charge (Q g) reduces switching losses without compromising conduction losses.

100% avalanche tested

Superior thermal resistance

Pb-free lead plating

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