Infineon OptiMOS Type N-Channel MOSFET, 126 A, 40 V Enhancement, 8-Pin TSDSON

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Subtotal (1 reel of 5000 units)*

R 52 660,00

(exc. VAT)

R 60 560,00

(inc. VAT)

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  • Shipping from 25 May 2026
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Units
Per unit
Per Reel*
5000 - 5000R 10.532R 52,660.00
10000 - 10000R 10.268R 51,340.00
15000 +R 9.96R 49,800.00

*price indicative

RS stock no.:
214-8985
Mfr. Part No.:
BSZ025N04LSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

40V

Package Type

TSDSON

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

69W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

37nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

1.2mm

Length

5.35mm

Standards/Approvals

No

Width

6.1 mm

Automotive Standard

No

The Infineon 40V and 60V product families feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness.

100% avalanche tested

Superior thermal resistance

Optimized for synchronous rectification

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