Infineon OptiMOS 5 Type N-Channel MOSFET, 17 A, 30 V N, 8-Pin TSDSON BSZ0589NSATMA1

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Subtotal (1 pack of 20 units)*

R 213,98

(exc. VAT)

R 246,08

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 20R 10.699R 213.98
40 - 80R 10.432R 208.64
100 - 220R 10.119R 202.38
240 - 480R 9.714R 194.28
500 +R 9.326R 186.52

*price indicative

Packaging Options:
RS stock no.:
218-2984
Mfr. Part No.:
BSZ0589NSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS 5

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.4mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

5.2nC

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

2.1W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.4mm

Height

1.1mm

Width

3.4 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon N-Channel Power MOSFET. This MOSFET is optimized for high performance Wireless charger.

Low FOMSW for high frequency SMPS

Very low on-resistance RDS(on) @ VGS=4.5 V

100% avalanche tested

Superior thermal resistance

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