Infineon OptiMOS N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON BSZ0904NSIATMA1
- RS stock no.:
- 825-9089
- Mfr. Part No.:
- BSZ0904NSIATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 201,12
(exc. VAT)
R 231,28
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,940 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 480 | R 10.056 | R 201.12 |
| 500 - 980 | R 9.804 | R 196.08 |
| 1000 - 2480 | R 9.51 | R 190.20 |
| 2500 - 4980 | R 9.13 | R 182.60 |
| 5000 + | R 8.765 | R 175.30 |
*price indicative
- RS stock no.:
- 825-9089
- Mfr. Part No.:
- BSZ0904NSIATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.56V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 37W | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.4mm | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.56V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 37W | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.4mm | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
Not Applicable
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C Peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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