Infineon CoolMOS CE Type N-Channel MOSFET, 8.7 A, 700 V Enhancement, 3-Pin TO-251

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Subtotal (1 tube of 75 units)*

R 517,35

(exc. VAT)

R 594,975

(inc. VAT)

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Units
Per unit
Per Tube*
75 - 150R 6.898R 517.35
225 - 300R 6.726R 504.45
375 +R 6.524R 489.30

*price indicative

RS stock no.:
214-9111
Mfr. Part No.:
IPSA70R950CEAKMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.7A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS CE

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

94W

Typical Gate Charge Qg @ Vgs

15.3nC

Maximum Operating Temperature

150°C

Length

6.6mm

Width

2.38 mm

Standards/Approvals

No

Height

6.1mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

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