Infineon OptiMOS Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin TO-252 IPD14N06S280ATMA2

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Subtotal (1 pack of 20 units)*

R 184,74

(exc. VAT)

R 212,46

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 20R 9.237R 184.74
40 - 80R 9.006R 180.12
100 - 220R 8.736R 174.72
240 - 480R 8.387R 167.74
500 +R 8.051R 161.02

*price indicative

Packaging Options:
RS stock no.:
214-9031
Mfr. Part No.:
IPD14N06S280ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

30W

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

8nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

2.3mm

Standards/Approvals

No

Length

6.5mm

Width

6.22 mm

Automotive Standard

AEC-Q101

The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.

It is Automotive AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

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