Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252 IPD30N06S223ATMA2

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Subtotal (1 pack of 20 units)*

R 360,42

(exc. VAT)

R 414,48

(inc. VAT)

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  • 14,020 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
20 - 20R 18.021R 360.42
40 - 80R 17.57R 351.40
100 - 220R 17.043R 340.86
240 - 480R 16.362R 327.24
500 +R 15.707R 314.14

*price indicative

Packaging Options:
RS stock no.:
214-9036
Mfr. Part No.:
IPD30N06S223ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

23mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

100W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Maximum Operating Temperature

175°C

Height

2.3mm

Standards/Approvals

No

Length

6.5mm

Width

6.22 mm

Automotive Standard

AEC-Q101

The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.

It is Automotive AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

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