Infineon OptiMOS N-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-252 IPD15N06S2L64ATMA2

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Subtotal (1 pack of 20 units)*

R 259,56

(exc. VAT)

R 298,50

(inc. VAT)

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  • 13,440 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
20 - 20R 12.978R 259.56
40 - 80R 12.654R 253.08
100 - 220R 12.274R 245.48
240 - 480R 11.783R 235.66
500 +R 11.312R 226.24

*price indicative

Packaging Options:
RS stock no.:
214-9033
Mfr. Part No.:
IPD15N06S2L64ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

55V

Series

OptiMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

64mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

47W

Typical Gate Charge Qg @ Vgs

11nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Length

6.5mm

Standards/Approvals

No

Width

6.22mm

Height

2.3mm

Automotive Standard

AEC-Q101

The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.

It is Automotive AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

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