Infineon OptiMOS Type N-Channel MOSFET & Diode, 40 A, 40 V Enhancement, 8-Pin TSDSON

RS stock no.:: 220-7463
Mfr. Part No.:: IPZ40N04S5L4R8ATMA1
Manufacturer:: Infineon

Infineon OptiMOS Type N-Channel MOSFET & Diode, 40 A, 40 V Enhancement, 8-Pin TSDSON

Image representative of range

Bulk discount available

Subtotal (1 reel of 5000 units)*

R 21 960,00

(exc. VAT)

R 25 255,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

10,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
5000 - 5000	R 4.392	R 21,960.00
10000 - 10000	R 4.282	R 21,410.00
15000 +	R 4.153	R 20,765.00

*price indicative

RS stock no.:: 220-7463
Mfr. Part No.:: IPZ40N04S5L4R8ATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TSDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.8mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	22nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	48W
	Maximum Gate Source Voltage Vgs	16 V
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	175°C
	Height	1.05mm
	Standards/Approvals	RoHS
	Width	3.3 mm
	Length	3.3mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 40V
	Package Type TSDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.8mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 22nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 48W
	Maximum Gate Source Voltage Vgs 16 V
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 175°C
	Height 1.05mm
	Standards/Approvals RoHS
	Width 3.3 mm
	Length 3.3mm
	Automotive Standard AEC-Q101

The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.

OptiMOS™ - power MOSFET for automotive applications

N-channel - Enhancement mode - Logic Level

MSL1 up to 260°C peak reflow

175°C operating temperature

Infineon OptiMOS Type N-Channel MOSFET & Diode, 40 A, 40 V Enhancement, 8-Pin TSDSON

FREE delivery for orders over R 1,500.00

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