Infineon OptiMOS Type N-Channel MOSFET, 126 A, 40 V Enhancement, 8-Pin TSDSON BSZ025N04LSATMA1

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Subtotal (1 pack of 15 units)*

R 313,605

(exc. VAT)

R 360,645

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 15R 20.907R 313.61
30 - 75R 20.385R 305.78
90 - 225R 19.773R 296.60
240 - 465R 18.983R 284.75
480 +R 18.223R 273.35

*price indicative

Packaging Options:
RS stock no.:
214-8986
Mfr. Part No.:
BSZ025N04LSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

40V

Package Type

TSDSON

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

37nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

69W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.35mm

Height

1.2mm

Width

6.1 mm

Automotive Standard

No

The Infineon 40V and 60V product families feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness.

100% avalanche tested

Superior thermal resistance

Optimized for synchronous rectification

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