Infineon OptiMOS 5 Type N-Channel MOSFET, 112 A, 150 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 214-4408
- Mfr. Part No.:
- IPP076N15N5AKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 2 298,70
(exc. VAT)
R 2 643,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 06 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | R 45.974 | R 2,298.70 |
| 150 - 200 | R 44.825 | R 2,241.25 |
| 250 + | R 43.48 | R 2,174.00 |
*price indicative
- RS stock no.:
- 214-4408
- Mfr. Part No.:
- IPP076N15N5AKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 112A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | OptiMOS 5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.4mm | |
| Width | 15.93 mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 112A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series OptiMOS 5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Operating Temperature 175°C | ||
Height 4.4mm | ||
Width 15.93 mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
Related links
- Infineon OptiMOS™ 5 N-Channel MOSFET 150 V, 3-Pin TO-220 IPP076N15N5AKSA1
- Infineon N-Channel MOSFET 150 V, 3-Pin TO-262 IPI076N15N5AKSA1
- Infineon 600V CoolMOS SiC N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60R020CFD7XTMA1
- Infineon HEXFET N-Channel MOSFET 40 V DirectFET ISOMETRIC AUIRL7736M2TR
- Infineon N-Channel MOSFET 60 V, 8-Pin TDSON BSC034N06NSATMA1
- IXYS HiperFET 112 A 4-Pin SOT-227 IXFN132N50P3
- Infineon OptiMOS™ 5 N-Channel MOSFET 150 V, 3-Pin TO-220 IPP051N15N5AKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 150 V, 3-Pin TO-220 IPP111N15N3GXKSA1