Infineon OptiMOS 5 Type N-Channel MOSFET, 80 A, 80 V Enhancement, 3-Pin TO-220 IPP052N08N5AKSA1
- RS stock no.:
- 214-9083
- Mfr. Part No.:
- IPP052N08N5AKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 255,95
(exc. VAT)
R 294,34
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,210 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 25.595 | R 255.95 |
| 20 - 90 | R 24.955 | R 249.55 |
| 100 - 240 | R 24.206 | R 242.06 |
| 250 - 490 | R 23.238 | R 232.38 |
| 500 + | R 22.308 | R 223.08 |
*price indicative
- RS stock no.:
- 214-9083
- Mfr. Part No.:
- IPP052N08N5AKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 5 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Height | 9.45mm | |
| Width | 4.57 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 5 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Height 9.45mm | ||
Width 4.57 mm | ||
Automotive Standard No | ||
The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs. These latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies.
Qualified according to JEDEC1 for target applications
100% avalanche tested
Related links
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP052N08N5AKSA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 3-Pin D2PAK IPB049N08N5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin TDSON BSC070N10NS5ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP057N08N3GXKSA1
- Infineon N-Channel MOSFET 80 V, 3-Pin TO-220 IPP80N08S406AKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin D2PAK IPB054N08N3GATMA1
- onsemi PowerTrench N-Channel MOSFET 80 V, 8-Pin PQFN8 FDMS86300
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP037N08N3GXKSA1