Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 105 A, 150 V Enhancement, 3-Pin TO-263 IPB083N15N5LFATMA1

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Subtotal (1 pack of 2 units)*

R 238,69

(exc. VAT)

R 274,494

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 119.345R 238.69
10 - 98R 116.36R 232.72
100 - 248R 112.87R 225.74
250 - 498R 108.355R 216.71
500 +R 104.02R 208.04

*price indicative

Packaging Options:
RS stock no.:
220-7385
Mfr. Part No.:
IPB083N15N5LFATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

105A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS 5

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.3mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Combination of low R DS(on) and wide safe operating area (SOA)

High max. pulse current

High continuous pulse current

Rugged linear mode operation

Low conduction losses

Higher in-rush current enabled for faster start-up and shorter down time

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