Infineon OptiMOS 5 Type N-Channel MOSFET, 112 A, 150 V Enhancement, 3-Pin TO-220 IPP076N15N5AKSA1
- RS stock no.:
- 214-4409
- Mfr. Part No.:
- IPP076N15N5AKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 379,49
(exc. VAT)
R 436,415
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 30 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 75.898 | R 379.49 |
| 10 - 95 | R 74.00 | R 370.00 |
| 100 - 245 | R 71.78 | R 358.90 |
| 250 - 495 | R 68.908 | R 344.54 |
| 500 + | R 66.152 | R 330.76 |
*price indicative
- RS stock no.:
- 214-4409
- Mfr. Part No.:
- IPP076N15N5AKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 112A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | OptiMOS 5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 214W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.4mm | |
| Length | 10.2mm | |
| Width | 15.93 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 112A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series OptiMOS 5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 214W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Height 4.4mm | ||
Length 10.2mm | ||
Width 15.93 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
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