Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-263 IPD26N06S2L35ATMA2

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Subtotal (1 pack of 20 units)*

R 262,44

(exc. VAT)

R 301,80

(inc. VAT)

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  • 3,480 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
20 - 20R 13.122R 262.44
40 - 80R 12.794R 255.88
100 - 220R 12.41R 248.20
240 - 480R 11.913R 238.26
500 +R 11.437R 228.74

*price indicative

Packaging Options:
RS stock no.:
223-8515
Mfr. Part No.:
IPD26N06S2L35ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

1nC

Maximum Power Dissipation Pd

68W

Forward Voltage Vf

0.95V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS series N-channel MOSFET in DPAK package. It has benefits of highest current capability, lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.

Automotive AEC Q101 qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green package

•Ultra low Rds

•100% Avalanche tested

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