Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252
- RS stock no.:
- 214-4373
- Mfr. Part No.:
- IPD30N06S2L13ATMA4
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 29 915,00
(exc. VAT)
R 34 402,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 7,500 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 11.966 | R 29,915.00 |
| 5000 - 5000 | R 11.666 | R 29,165.00 |
| 7500 + | R 11.316 | R 28,290.00 |
*price indicative
- RS stock no.:
- 214-4373
- Mfr. Part No.:
- IPD30N06S2L13ATMA4
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.65mm | |
| Standards/Approvals | No | |
| Height | 2.35mm | |
| Width | 6.42 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Operating Temperature 175°C | ||
Length 6.65mm | ||
Standards/Approvals No | ||
Height 2.35mm | ||
Width 6.42 mm | ||
Automotive Standard AEC-Q101 | ||
This Infineon OptiMOS MOSFET provides high current capability, and Lowest switching and conduction power losses for highest thermal efficiency. It is 100% Avalanche tested.
It is lead-free
Related links
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin DPAK IPD30N06S2L13ATMA4
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR4105ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR4105ZPBF
- Infineon OptiMOS N-Channel MOSFET 55 V, 3-Pin DPAK IPD30N06S223ATMA1
- Infineon OptiMOS N-Channel MOSFET 55 V, 3-Pin DPAK IPD30N06S2L23ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin DPAK IPD30N06S223ATMA2
- Infineon OptiMOS™ Silicon N-Channel MOSFET 55 V, 3-Pin DPAK IPD30N06S215ATMA2
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin D2PAK IRLZ34NSTRLPBF