Infineon OptiMOS Type N-Channel MOSFET, 50 A, 55 V Enhancement, 3-Pin TO-252

Image representative of range

Bulk discount available

Subtotal (1 reel of 2500 units)*

R 27 167,50

(exc. VAT)

R 31 242,50

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Reel*
2500 - 2500R 10.867R 27,167.50
5000 - 5000R 10.595R 26,487.50
7500 +R 10.277R 25,692.50

*price indicative

RS stock no.:
214-4375
Mfr. Part No.:
IPD50N06S2L13ATMA2
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

54nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

136W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.65mm

Height

2.35mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET provides high current capability, and Lowest switching and conduction power losses for highest thermal efficiency. It is 100% Avalanche tested.

Optimized total gate charge enables smaller driver output stages

Related links